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Samsung's 3D V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 32 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint. The TurboWrite technology helps to maximize your computing ability. The 850 EVO delivers exceptionally high performance in sequential read (540MB/s) and write (520MB/s) speeds, as well as optimized random performance for high-end computing on client PCs
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